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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment up to 2 GHz. PINNING PIN 1 2 3 base emitter collector Marking code: V2p. BFQ67 DESCRIPTION Silicon NPN wideband transistor in a plastic SOT23 package. alfpage 3 DESCRIPTION 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts 97 C; note 1 open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. 20 10 2.5 50 300 +150 175 V V V mA mW C C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts 97 C; note 1 IC = 15 mA; VCE = 5 V IC = 15 mA; VCE = 8 V IC = 15 mA; VCE = 8 V; f = 1 GHz IC = 5 mA; VCE = 8 V; f = 1 GHz open emitter open base CONDITIONS MIN. - - - - 60 - - - TYP. - - - - 100 8 14 1.3 MAX. 20 10 50 300 - - - - GHz dB dB UNIT V V mA mW 1998 Aug 27 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 260 BFQ67 UNIT K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 15 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 15 mA; VCE = 8 V; f = 2 GHz F s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; Zs = 60 s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; Zs = 60 Note MIN. - 60 - - - - - - - - - - - - TYP. - 100 0.7 1.3 0.5 8 14 8 1.3 1.7 2.2 2.5 2.7 3 MAX. 50 - - - - - - - - - - - - - pF pF pF GHz dB dB dB dB dB dB dB dB UNIT nA S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB . 2 2 1 - S 11 1 - S 22 2 1998 Aug 27 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, halfpage 400 MRA614 MBB301 Ptot (mW) 300 handbook, halfpage 120 h FE 80 200 40 100 0 0 50 100 150 Ts (oC) 200 0 0 20 40 I C (mA) 60 VCE = 5 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current, typical values. handbook, halfpage 0.8 MRA607 handbook, halfpage 10 MBB303 Cre (pF) 0.6 fT (GHz) 8 6 0.4 4 0.2 2 0 0 5 10 VCB (V) 15 0 0 10 20 30 I C (mA) 40 IC = ic = 0; f = 1 MHz. VCE = 8 V; Tamb = 25 C; f = 2 GHz. Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 Transition frequency as a function of collector current, typical values. 1998 Aug 27 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, halfpage 25 MRA611 MRA610 handbook, halfpage 50 gain (dB) 20 gain (dB) 40 GUM MSG 15 Gmax GUM 30 10 MSG 20 5 10 Gmax 0 0 10 20 IC (mA) 30 0 10 102 103 f (MHz) 104 VCE = 8 V; f = 1 GHz. VCE = 8 V; IC = 5 mA. Fig.6 Gain as a function of collector current, typical values. Fig.7 Gain as a function of frequency, typical values. MRA608 MRA609 handbook, halfpage 50 handbook, halfpage 50 gain (dB) 40 GUM 30 MSG 20 gain (dB) 40 GUM 30 MSG 20 Gmax 10 Gmax 10 0 10 10 2 103 f (MHz) 10 4 0 10 10 2 103 f (MHz) 10 4 VCE = 8 V; IC = 15 mA. VCE = 8 V; IC = 30 mA. Fig.8 Gain as a function of frequency, typical values. Fig.9 Gain as a function of frequency, typical values. 1998 Aug 27 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, halfpage 4 MBB308 handbook, halfpage 5 MRA613 F (dB) 3 f = 2 GHz F (dB) 4 1 GHz 900 MHz 2 500 MHz 2 optimum source 3 ZS = 60 1 1 0 1 10 I C (mA) 100 0 1 10 IC (mA) 102 VCE = 8 V. VCE = 6 V; f = 900 MHz. Fig.10 Minimum noise figure as a function of collector current, typical values. Fig.11 Noise figure as a function of collector current, typical values. handbook, halfpage 4 MBB309 handbook, halfpage 5 MRA612 F (dB) 3 F I C = 30 mA (dB) 4 IC = 0.5 mA 15 mA 3 5 mA 1 mA 2 mA 2 2 1 1 0 10 2 10 3 f (MHz) 10 4 0 102 103 f (MHz) 104 VCE = 8 V. VCE = 1 V. Fig.12 Minimum noise figure as a function of frequency, typical values. Fig.13 Minimum noise figure as a function of frequency, typical values. 1998 Aug 27 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, full pagewidth 1 0.5 2 0.2 3 GHz +j 0 -j 40 MHz 0.2 0.2 1 2 5 10 5 10 10 5 0.5 1 VCE = 8 V; IC = 15 mA; Zo = 50 . 2 MBC968 Fig.14 Common emitter input reflection coefficient (S11), typical values. handbook, full pagewidth 90 120 60 150 30 40 MHz 180 0.2 0.1 3 GHz 0 + - 150 30 120 90 VCE = 8 V; IC = 15 mA. 60 MBC967 Fig.15 Common emitter forward transmission coefficient (S21), typical values. 1998 Aug 27 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, full pagewidth 90 120 60 3 GHz 150 30 o 180 0.2 0.1 40 MHz + 0 - 150 30 120 90 VCE = 8 V; IC = 15 mA. 60 MBC966 Fig.16 Common emitter reverse transmission coefficient (S12), typical values. handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz 10 0.5 1 VCE = 8 V; IC = 15 mA; Zo = 50 . 2 MBC965 Fig.17 Common emitter output reflection coefficient (S22), typical values. 1998 Aug 27 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFQ67 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Aug 27 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ67 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 27 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistor NOTES BFQ67 1998 Aug 27 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Aug 27 Document order number: 9397 750 04295 |
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